Dimensionality of electron-electron scattering and interaction effects in thin wires and films
- 15 November 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (14) , 7705-7708
- https://doi.org/10.1103/physrevb.36.7705
Abstract
We have measured the electron-electron inelastic scattering rate, and the contributions of localization and electron-electron interactions to the resistance of thin Bi wires and films. We find that in some cases the inelastic scattering is effectively three dimensional, while the interaction effects are either one or two dimensional (for the wires and films, respectively). This appears to be in conflict with the current theory, which predicts that these processes should be controlled by the same length scale, and suggests that the important length scales in these systems are not completely understood.Keywords
This publication has 12 references indexed in Scilit:
- Weak localization in thin films: a time-of-flight experiment with conduction electronsPublished by Elsevier ,2002
- Electron-electron interactions in GaAs-As heterostructuresPhysical Review B, 1986
- Disordered electronic systemsReviews of Modern Physics, 1985
- Weak-localization, spin-orbit, and electron-electron interaction effects in two- and three-dimensional bismuth filmsPhysical Review B, 1983
- Inelastic Scattering and Spin Scattering Times in Metallic Thin FilmsJournal of the Physics Society Japan, 1983
- The Anti-Localization Effect in Bi Thin FilmsJournal of the Physics Society Japan, 1983
- Effects of electron-electron collisions with small energy transfers on quantum localisationJournal of Physics C: Solid State Physics, 1982
- Magnetoresistance and Hall effect in a disordered two-dimensional electron gasPhysical Review B, 1980
- Fabrication of 300-Å metal lines with substrate-step techniquesApplied Physics Letters, 1980
- Galvanomagnetic Studies of Bismuth Films in the Quantum-Size-Effect RegionPhysical Review B, 1972