An n+-n-p germanium avalanche photodiode

Publisher Website
Google Scholar
Abstract
Low‐noise germanium avalanche photodiodes of an n+‐n‐p structure have been investigated. Deep n+‐n‐p junctions have a lower noise than shallow n+‐p junctions because holes have a higher ionization coefficient in germanium, and these n+‐n‐p diodes have a higher hole‐to‐electron collection efficiency. An excess noise factor F≈7 at the multiplication factor of 10 are obtained at a wavelength of 1.3 μm, whereas F≈10 for n+‐p diodes. An internal quantum efficiency of 70–80% is obtained at 1.3 μm.

This publication has 10 references indexed in Scilit: