Temperature Dependence of Ionization Rates in Ge
- 1 November 1971
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (12) , 5198-5201
- https://doi.org/10.1063/1.1659922
Abstract
The ionization rates of electrons and holes in Ge have been measured from 200 to 300°K and were fit to the Baraff theory, in which the optical‐phonon mean free path is verified to be temperature dependent and fits to the formula λ=λ0 tanh(Ep/2KT), where Ep is the average optical‐phonon energy. The asymptotic optical‐phonon mean free paths deduced from experiments are λ0e=76 Å and λ0h=84 Å for electrons and holes, respectively, which are in good agreement with Miller's data obtained at room temperature. A simplified approach to calculate the ionization rates from the photomultiplication data has also been deduced for the one‐sided abrupt junction.This publication has 7 references indexed in Scilit:
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