Comparison of Shubnikov-de Haas effect and cyclotron resonance on Si(100) MOS transistors under uniaxial stress
- 1 November 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 32 (7) , 543-546
- https://doi.org/10.1016/0038-1098(79)90371-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Observation of Sixfold Valley Degeneracy in Electron Inversion Layers on Si(111)Physical Review Letters, 1979
- Surface quantum oscillations in silicon (100) inversion layers under uniaxial pressurePhysical Review B, 1978
- Stress Effects on Electronic Properties of Silicon Inversion LayersJournal of the Physics Society Japan, 1978
- Many-valley interactions in-type silicon inversion layersPhysical Review B, 1978
- Effective masses in (100) silicon inversion layersSolid State Communications, 1977
- Surface quantum oscillations in (100) inversion layers under uniaxial stressSolid State Communications, 1976
- Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surfaceSolid State Communications, 1976
- Electronic Structure of Inversion Layers in Many-Valley SemiconductorsPhysical Review Letters, 1976
- Mechanical stress influence on effective masses in Si inversion layersSurface Science, 1976
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967