High-performance polysilicon contacted shallow junctions formed by stacked-amorphous-silicon films
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (1) , 23-25
- https://doi.org/10.1109/55.144939
Abstract
A high-performance polysilicon contacted shallow junction diode formed by using a stacked-amorphous-silicon (SAS) film as the diffusion source is reported. The diode exhibited a very low leakage current (or=100 V), and a forward ideality factor m<or=1.05 over seven decades.Keywords
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