Improvement of electrical characteristics of polycrystalline silicon-contacted diodes after forward bias stressing
- 29 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (18) , 1904-1906
- https://doi.org/10.1063/1.104007
Abstract
Improvement of the electrical characteristics of polycrystalline silicon (polysilicon) contacted n+-p diodes after application of a forward bias stressing is reported. The improvement existed for diodes whose emitter-implanted doses of arsenic were larger than 6×1015 cm−2 for HF-dipped devices, and 1×1016 cm−2 for H2SO4 heat-treated devices. The improvement is believed to be due to the neutralization by arsenic of dangling bonds at polysilicon grain boundaries and at the poly/mono silicon interfaces during the stressing process.Keywords
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