Modeling hot-carrier effects in polysilicon emitter bipolar transistors
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2238-2244
- https://doi.org/10.1109/16.8798
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Subbreakdown drain leakage current in MOSFETIEEE Electron Device Letters, 1987
- The non-ideal current in bipolar transistorsSolid-State Electronics, 1987
- Bipolar transistor with self-aligned lateral profileIEEE Electron Device Letters, 1987
- Poly emitter bipolar hot carrier effects in an advanced BiCMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Reliability analysis of self-aligned bipolar transistor under forward active current stressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- Hot carrier effects in advanced self-aligned bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Hot-electron currents in very short channel MOSFET'sIEEE Electron Device Letters, 1983
- Avalanche degradation of hFEIEEE Transactions on Electron Devices, 1970
- Zener and avalanche breakdown in silicon alloyed p-n junctions—ISolid-State Electronics, 1968