Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy
- 31 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 396-398
- https://doi.org/10.1016/s0022-0248(98)01359-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor depositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Epitaxial growth and optical transitions of cubic GaN filmsPhysical Review B, 1996
- Thermal stability of indium nitride single crystal filmsJournal of Applied Physics, 1993
- Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpeJournal of Crystal Growth, 1993