Zinc-Blende-Type Cubic GaN Single Crystals Prepared in a Potassium Flux
- 1 February 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (2B) , L146
- https://doi.org/10.1143/jjap.39.l146
Abstract
Single crystals of zinc-blende-type cubic GaN (c-GaN, space group F43m, lattice parameter a=4.5062(9) Å) were synthesized at 750°C by the reaction of Ga and N2 in a potassium flux. The crystal structure was analyzed by single-crystal X-ray diffraction with an R1-factor of 2.1% (R1=Σ∥Fo-Fc∥/Σ|Fo|), where Fo is the observed structure factor and Fc is the calculated structure factor). A peak of near-band-edge emission was observed at 3.20 eV in the cathodoluminescence spectrum measured at 25°C.Keywords
This publication has 18 references indexed in Scilit:
- Cubic GaN formation under nitrogen-deficient conditionsApplied Physics Letters, 1999
- Crystal Growth of GaN from Na-Ga Melt in BN Containers.Journal of the Ceramic Society of Japan, 1999
- Polarity of GaN Single Crystals Prepared with Na FluxJapanese Journal of Applied Physics, 1998
- Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) SubstratesJapanese Journal of Applied Physics, 1998
- Nitride-based semiconductors for blue and green light-emitting devicesNature, 1997
- Preparation of GaN Single Crystals Using a Na FluxChemistry of Materials, 1997
- Topochemical Control in the Solid-State Conversion of Cyclotrigallazane into Nanocrystalline Gallium NitrideChemistry of Materials, 1995
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Properties of Gallium NitrideMRS Proceedings, 1987
- Cubic phase gallium nitride by chemical vapour depositionPhysica Status Solidi (a), 1974