Effects of RF annealing on the excess charge centers in MIS dielectrics
- 1 August 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (4) , 445-454
- https://doi.org/10.1109/jssc.1978.1051075
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Low pressure rf annealing: A new technique to remove charge centers in MIS dielectricsApplied Physics Letters, 1978
- Effects of electron-beam radiation on MOS structures as influenced by the silicon dopantJournal of Applied Physics, 1977
- RF annealing: A method of removing radiation damage in MIS structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Effects of electron-beam irradiation on the properties of CVD Si3N4 films in MNOS structuresJournal of Applied Physics, 1976
- Oxide thickness dependence of electron-induced surface states in MOS structuresApplied Physics Letters, 1975
- Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitorsApplied Physics Letters, 1975
- Effect of gamma-ray irradiation on the surface states of MOS tunnel junctionsJournal of Applied Physics, 1974
- Dependence of MOS Device Radiation-Sensitivity on Oxide ImpuritiesIEEE Transactions on Nuclear Science, 1972
- Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate InsulatorIEEE Transactions on Nuclear Science, 1971
- Application of RF Discharges to SputteringIBM Journal of Research and Development, 1970