Interface Characterization of Semiconductor Quantum Nanostructures

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Abstract
The correlation between the actual interface structure and the observed distinct electronic properties resulting from carrier confinement becomes crucial with the increase of confinement in semiconductor quantum nanostructures. We present two case studies for the necessity of a more critical assessment of the properties of such nanostructures. First, we discuss the problem of exciton localization in GaAs quantum wells. Second, we critically evaluate the area of strained InAs insertions in a GaAs matrix to realize quantum dot structures. We show that unintentional exciton (carrier) localization at growth related potential fluctuations often masks the desired quantum confinement effects.