A 2.17-dB NF 5-GHz-band monolithic CMOS LNA with 10-mW DC power consumption
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- 14 March 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 53 (3) , 813-824
- https://doi.org/10.1109/tmtt.2004.842510
Abstract
Design principles of CMOS low-noise amplifiers (LNAs) for simultaneous input impedance and noise matching by tailoring device size for R/sub opt/=50 /spl Omega/ are introduced. It is found that R/sub opt/ close to 50 /spl Omega/ can be obtained by using small devices (110 /spl mu/m) and small currents (5 mA). Based on the proposed approach, CMOS LNAs with on-chip input and output matching networks on thin (/spl sim/20 /spl mu/m) and normal (750 /spl mu/m) substrates are implemented. It is found that the noise figure (NF) (3.0 dB) of the CMOS LNA at 5.2 GHz with 10-mW power consumption on the normal (750 /spl mu/m) substrate can be reduced to 2.17 dB after the substrate is thinned down to /spl sim/20 /spl mu/m. The reduction of NF is attributed to the suppression of substrate loss of the on-chip inductors. The input return loss (S/sub 11/) is smaller than -22 dB across the entire band of interest (5.15-5.35 GHz). An input 1-dB compression point (P/sub 1 dB/) of -8.3 dBm and an input third-order intercept point of 0.8 dBm were also obtained for the LNA on the thin substrate.Keywords
This publication has 17 references indexed in Scilit:
- Wide-band compact modeling of spiral inductors in RFICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 2.17 dB NF, 5 GHz band monolithic CMOS LNA with 10 mW DC power consumptionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 5.2-GHz LNA in 0.35-μm CMOS utilizing inter-stage series resonance and optimizing the substrate resistanceIEEE Journal of Solid-State Circuits, 2003
- A 1-V transformer-feedback low-noise amplifier for 5-GHz wireless lan in 0.18-μm CMOSIEEE Journal of Solid-State Circuits, 2003
- A 5.8-GHz 1-V low-noise amplifier in SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Concurrent multiband low-noise amplifiers-theory, design, and applicationsIEEE Transactions on Microwave Theory and Techniques, 2002
- High-performance 5.2 GHz LNA with on-chip inductorto provide ESD protectionElectronics Letters, 2001
- 5-GHz CMOS radio transceiver front-end chipsetIEEE Journal of Solid-State Circuits, 2000
- A 5-GHz CMOS wireless LAN receiver front endIEEE Journal of Solid-State Circuits, 2000
- A 1.5-V, 1.5-GHz CMOS low noise amplifierIEEE Journal of Solid-State Circuits, 1997