Room-temperature photo-pumped operation of 1.58-μm vertical-cavity lasers fabricated on Si substrates using wafer bonding
- 1 November 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (11) , 1426-1428
- https://doi.org/10.1109/68.541538
Abstract
Long-wavelength vertical cavity lasers have been successfully fabricated on Si substrates using direct wafer bonding. InGaAs-InGaAsP multiquantum-well active layers with 40.5-pair InGaAsP-InP stacked mirrors have been directly bonded on 3.5-pair Al/sub 2/O/sub 3//a-Si mirrors deposited on Si substrates. The sample has been optically pumped at room temperature and lasing operation at 1.58-/spl mu/m has been achieved.Keywords
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