Properties of thin oxide-nitride-oxide stacked films
- 1 March 1988
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 17 (2) , 155-159
- https://doi.org/10.1007/bf02652146
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Study of carrier trapping in stacked dielectricsIEEE Electron Device Letters, 1986
- Traps created at the interface between the nitride and the oxide on the nitride by thermal oxidationApplied Physics Letters, 1983
- Thermal Oxidation Rate of a Si3N4Film and Its Masking Effect against Oxidation of SiliconJapanese Journal of Applied Physics, 1978