Ultrafast low-power operation of p/sup +/-n/sup +/ double-gate SOI MOSFETs
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- A novel passivation technology of InGaAs surfaces using Si interface control layer and its application to field effect transistorSolid-State Electronics, 1995
- Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gateSolid-State Electronics, 1984