Dependence of junction formation on substrate in implanted HgCdTe
- 15 May 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (10) , 976-978
- https://doi.org/10.1063/1.95786
Abstract
Ion implantation in HgCdTe grown by liquid phase epitaxy on CdTe/Al2O3 and on Bridgman CdTe substrates revealed a dependence of junction formation on the defect and impurity properties of the base substrate evidently transmitted through the epitaxial layer. Techniques such as cathodoluminescence, etch pit count, differential Hall, electron beam induced current, and secondary ion mass spectroscopy led to the following findings concerning junction formation: the carrier concentration distribution in the n region may vary from abrupt to graded, depending on substrate properties; the junction depth and junction carrier profile depend on defect structure in the layer, background impurities, and implant/anneal conditions; in annealed HgCdTe, differences exist in diffusion mechanisms of radiation‐induced donors between bulk CdTe substrates and CdTe/Al2O3.Keywords
This publication has 8 references indexed in Scilit:
- High performance photovoltaic infrared devices in Hg1−xCdxTe on sapphireApplied Physics Letters, 1985
- An overview on defect studies in MCTJournal of Vacuum Science & Technology A, 1985
- Cathodoluminescence of HgCdTe and CdTe on CdTe and sapphireJournal of Vacuum Science & Technology A, 1985
- Liquid phase epitaxial growth of large area Hg1−xCdxTe epitaxial layersJournal of Applied Physics, 1984
- Behavior of implantation-induced defects in HgCdTeJournal of Vacuum Science and Technology, 1982
- Ion Implantation Study of HgCdTeJapanese Journal of Applied Physics, 1980
- Observation of dislocations in cadmium telluride by cathodoluminescence microscopyApplied Physics Letters, 1979
- Studies of anomalous diffusion of impurities in siliconSolid-State Electronics, 1966