Molecular Beam Epitaxy of Artificially Layered III-V Semiconductors: Ultrathin-Layer (GaAs)m(AlAs)mSuperlattices and Delta (δ-) Doping in GaAs
- 1 January 1987
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. T19A, 136-146
- https://doi.org/10.1088/0031-8949/1987/t19a/020
Abstract
No abstract availableKeywords
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