Gunn-effect domain formation controlled by a complex load
- 1 January 1969
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 2 (1) , 1-5
- https://doi.org/10.1088/0022-3727/2/1/301
Abstract
The nucleation of Gunn-effect domains can be controlled by changes in external impedance if the value of the nl product is only slightly higher than 1012cm−2. This phenomenon is studied theoretically with the help of Nyquist's criterion. Experimental results with Gunn-effect diodes are reported which support the analysis.Keywords
This publication has 4 references indexed in Scilit:
- The stability and reflection gain of subcritically doped Gunn diodesSolid-State Electronics, 1968
- Theory of the Gunn EffectPhysical Review B, 1967
- Generation of subnanosecond pulses with bulk GaAsProceedings of the IEEE, 1967
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966