Measurement of Electron Mobility in Hydrogenated Amorphous-Silicon Using 4-Terminal Transistor Structures
- 1 April 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (4A) , L206
- https://doi.org/10.1143/jjap.23.l206
Abstract
Field dependence of field-effect mobility in hydrogenated amorphous-silicon has been investigated using a novel 4-terminal transistor structure. The mobility evaluated from the transistor characteristics did not depend on electric field strength up to 20 kV/cm.Keywords
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