Characterization of GaAs/InGaAs quantum wells using photocurrent spectroscopy
- 15 May 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (10) , 7775-7779
- https://doi.org/10.1063/1.362383
Abstract
We report on characterization studies of high quality metal‐organic vapor phase epitaxy and molecular beam epitaxygrown GaAs/InGaAs quantum wells, set within p‐i‐n diodes, to determine the well widths, indium mole fractions, and conduction band offset. We present photocurrent spectra containing a larger number of transitions than revealed in photoluminescence or photoluminescence excitation experiments. The energies of these transitions have been modeled using a theoretical characterization tool known as ‘‘contouring,’’ which is used in this strained system for the first time. This has enabled determination of the conduction band offset in GaAs/InGaAs quantum wells, to a value between 0.62 and 0.64, for a range of indium fractions between 0.155 and 0.23. As a final, additional check on our results, we compare the field dependence of the e1‐hh1 exciton transition energy with our theoretical calculations and find good agreement.This publication has 15 references indexed in Scilit:
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