Temperature Coefficient of the Breakdown Voltage of Silicon p-n Junctions†
- 1 June 1967
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 22 (6) , 513-519
- https://doi.org/10.1080/00207216708937986
Abstract
The temperature coefficient of the breakdown voltage of silicon abrupt and linearly graded junctions is calculated by considering the temperature dependence of the effective ionization coefficient. It is found that the temperature coefficient increases with the breakdown voltage of the junction, and a saturated effect is predicted. Comparison with experimental measurements at room temperature shows a, semi-quantitative agreement.Keywords
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