Fault-tolerant designs for 256 Mb DRAM
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- A 2.5-V 16-Mb DRAM in 0.5-μm CMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 14-ns 14-Mb CMOS DRAM with 300-mW active powerIEEE Journal of Solid-State Circuits, 1992
- A 40-ns 64-Mb DRAM with 64-b parallel data bus architectureIEEE Journal of Solid-State Circuits, 1991