Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions
- 1 August 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (5) , 549-551
- https://doi.org/10.1063/1.112293
Abstract
The structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions have been studied by transmission electron microscopy, cathodoluminescence (CL), and photoluminescence. In undoped ZnSe epilayers, irregular dislocation segments tending to lie roughly along [100] and [010] directions were observed as well as long straight 60° dislocations along [110] and [11̄0] directions. In N‐doped ([N]≳1×1018 cm−3) ZnSe epilayers, the misfit dislocations were predominantly dissociated into partial dislocations which makes cross slip and formation of irregular dislocations more difficult; only the straight dislocations along [110] and [11̄0] were observed. The CL observations suggest that the irregular dislocations trap carriers more efficiently than the dislocations along 〈110〉.Keywords
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