The maximum operating region in SiGe HBTs for RF power amplifiers
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X) , 1023-1026
- https://doi.org/10.1109/mwsym.2002.1011805
Abstract
Microwave waveforms of SiGe HBTs have been directly measured. The maximum operating region has been experimentally investigated by sweeping the load lines and power of the input signal. The device is found to operate beyond the conventional BVceo, while GaAs HBTs cannot survive at that voltage. The conventional BVceo is found to limit the average Vc of the maximum load lines, but has no influence on the peak voltage. Another BVceo measured with a voltage generator is proposed to represent the avalanche breakdown instead of the conventional one.Keywords
This publication has 5 references indexed in Scilit:
- Direct measurement of the maximum operating region in GaAs HBTs for RF power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiGe-power amplifiers in flipchip and packaged technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applicationsIEEE Journal of Solid-State Circuits, 2000
- A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit techniqueIEEE Journal of Solid-State Circuits, 2000
- A 40GHz large-signal double-reflectometer waveform measurement system designed for load-pull applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996