Persistent photoconductivity in hydrogenated amorphous silicon
- 31 July 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 59 (3) , 177-181
- https://doi.org/10.1016/0038-1098(86)90204-8
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Temperature and excitation dependence of the photo-induced excess conductivity in doping modulated amorphous siliconJournal of Non-Crystalline Solids, 1985
- Persistent photoconductivity in doping-modulated amorphous silicon superlatticesJournal of Non-Crystalline Solids, 1985
- Persistent photoconductivity inlayered structuresPhysical Review B, 1985
- Persistent Photoconductivity in Doping-Modulated Amorphous SemiconductorsPhysical Review Letters, 1984
- Carrier Recombination Times in Amorphous-Silicon Doping SuperlatticesPhysical Review Letters, 1984
- Optically induced excess conductivity in compensated a-Si:H filmsJournal of Non-Crystalline Solids, 1983
- Photoinduced metastable surface effects in boron-doped hydrogenated amorphous silicon filmsJournal of Applied Physics, 1983
- Temperature dependent light induced conductivity changes in hydrogenated amorphous siliconJournal of Applied Physics, 1983
- Persistent photoconductivity and dangling bonds in amorphous germaniumPhysics Letters A, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977