Design guidelines for deep-submicrometer MOSFETs
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 386-389
- https://doi.org/10.1109/iedm.1988.32837
Abstract
A comprehensive study of the performance and reliability constraints on the dimensions and power supply of deep-submicrometer non-LDD (lightly doped drain) n-channel MOSFETs is presented. Design guidelines extracted from experimental results are presented that are based on the following factors: short-channel effects; drain-induced barrier-lowering effects, off-state leakage currents, hot-electron reliability, time-dependent dielectric breakdown, current-driving capability, voltage gain, and switching speed. The relative importance of each mechanism for a given technology and design is examined. As an example, a set of design curves using typical performance and reliability criteria is provided for n-channel deep-submicrometer devices. With slight modifications, these design curves can also be extended to other technologies, including p-channel and LDD devices.<>Keywords
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