Magnetic-field-induced resonant tunneling across a thick square barrier
- 15 January 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (3) , 2201-2212
- https://doi.org/10.1103/physrevb.43.2201
Abstract
The spatial part of the wave function is calculated exactly for tunneling in a magnetic field, confined within a thick square barrier. Due to the presence of the field perpendicular to the current flow, transmission is heavily reduced and a threshold is found, based on very general kinematical arguments. However, magnetic-field-induced scattering states could be present, which have a high probability density inside the barrier giving rise to resonant tunneling. They are responsible for a strong dependence of the transmission on the energy and the angle of incidence of the incoming beam. These resonances are analyzed as a function of an applied external bias and the possibility of their appearance in the I-V characteristic is discussed. They certainly affect any typical time for tunneling, as shown in the limiting case of a totally reflecting magnetic barrier.Keywords
This publication has 13 references indexed in Scilit:
- Resonant tunneling in a transverse magnetic field: Transition from the electric to the magnetic quantum limitPhysical Review B, 1989
- Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)AsSolid-State Electronics, 1988
- Observations of Magnetoquantized Interface States by Electron Tunneling in Single-Barrier HeterostructuresPhysical Review Letters, 1987
- Observation of bulk Landau levels in transverse magnetotunneling in AlxGa1-xAs capacitorsSolid State Communications, 1987
- Effect of a Transverse Magnetic Field on the Tunnel Current through Thick and Low Semiconductor BarriersEurophysics Letters, 1987
- Frequency limit of double-barrier resonant-tunneling oscillatorsApplied Physics Letters, 1985
- Larmor precession and the traversal time for tunnelingPhysical Review B, 1983
- Traversal Time for TunnelingPhysical Review Letters, 1982
- Landau-level spectra of conduction electrons at an InAs surfacePhysical Review B, 1975
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974