DEFECTS IN GaAs GROWN ON Ge SUBSTRATES
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and filmsJournal of Vacuum Science & Technology B, 1983
- Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and GeJournal of Crystal Growth, 1977
- Antiphase boundaries in semiconducting compoundsJournal of Physics and Chemistry of Solids, 1969