Antiphase boundaries in GaAs
- 15 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (8) , 879-881
- https://doi.org/10.1063/1.95963
Abstract
Antiphase boundaries in GaAs have been produced by growing the GaAs on {001} Ge substrates. The GaAs was grown by the technique of organometallic vapor phase epitaxy to a thickness in excess of 1 μm. The antiphase boundaries are shown to be faceted with facets parallel to the {110} planes being particularly common. The rigid-body translation at the different facet planes is shown to be small for the {110} planes but it can be large for other facet planes.Keywords
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