Models of Si-SiO2interface reactions
- 1 December 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (12) , 980-985
- https://doi.org/10.1088/0268-1242/4/12/003
Abstract
No abstract availableKeywords
This publication has 47 references indexed in Scilit:
- Chemistry of Si-SiO2 interface trap annealingJournal of Applied Physics, 1988
- Interface traps and P b centers in oxidized (100) silicon wafersApplied Physics Letters, 1986
- Electron spin resonance of [11̄1], [1̄11], and [111̄] oriented dangling orbital P b0 defects at the (111) Si/SiO2 interfaceApplied Physics Letters, 1986
- Characterization of Si/SiO2 interface defects by electron spin resonanceProgress in Surface Science, 1983
- Measurement of semiconductor–insulator interface states by constant-capacitance deep-level transient spectroscopyJournal of Vacuum Science and Technology, 1982
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971
- Characterization of Surface States at the Si-SiO[sub 2] Interface Using the Quasi-Static TechniqueJournal of the Electrochemical Society, 1971
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- Electron Spin Resonance in SiO2 Grown on SiliconJapanese Journal of Applied Physics, 1966