Influence of absorber length on inhomogenously pumped, bistable semiconductor lasers
- 15 September 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (6) , 2203-2207
- https://doi.org/10.1063/1.339523
Abstract
We report on experiments with inhomogenously pumped semiconductor lasers of InGaAsP (1300 nm) having a saturable absorber. Bistability disappears for long relative length of the absorber, and lasing occurs for wavelengths considerably longer than the luminescence peak. Both these results are very important for designing bistable lasers and are consistent with recently published theoretical data.This publication has 14 references indexed in Scilit:
- Influence of carrier leakage on bistability in an inhomogeneously pumped semiconductor laserIEEE Journal of Quantum Electronics, 1987
- Temperature dependence of bistable InGaAsP/InP lasersIEEE Journal of Quantum Electronics, 1986
- Beyond mean field and plane wave theories of bistable semiconductor lasersIEEE Journal of Quantum Electronics, 1986
- Turn-off characteristics of bistable laser diodeJournal of Applied Physics, 1986
- Optical bistability and chaos in a semiconductor laser with a saturable absorberApplied Physics Letters, 1984
- Bistable operation of two semiconductor lasers in an external cavity: Rate-equation analysisIEEE Journal of Quantum Electronics, 1983
- Optical input and output characteristics for bistable semiconductor lasersApplied Physics Letters, 1982
- Bistable operation of semiconductor lasers by optical injectionElectronics Letters, 1981
- Bistable operation in semiconductor lasers with inhomogeneous excitationElectronics Letters, 1981
- Analysis of a proposed bistable injection laserSolid-State Electronics, 1964