0.1- mu m gate-length superconducting FET
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (2) , 61-63
- https://doi.org/10.1109/55.32429
Abstract
A superconducting field-effect transistors (FET) with a 0.1- mu m-length gate electrode was fabricated and tested at liquid-helium temperature. Two superconducting electrodes (source and drain) were formed on the same Si substrate surface with an oxide-insulated gate electrode by a self-aligned fabrication process. Superconducting current flowing through the semiconductor (Si) between the two superconducting electrodes (Nb) was controlled by a gate-bias voltage.<>Keywords
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