Surface related degradation of InP-based HEMTs during thermal stress
- 1 September 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (9) , 1627-1630
- https://doi.org/10.1016/0038-1101(95)00057-z
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- HEMT degradation in hydrogen gasIEEE Electron Device Letters, 1994
- InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layerIEEE Electron Device Letters, 1993
- Ion milling damage in InP and GaAsJournal of Applied Physics, 1990
- Initial evaporation rates from GaAs during rapid thermal processingJournal of Applied Physics, 1988