Polycrystalline silicon as a diffusion source and interconnect layer in I/sup 2/L realizations
- 1 April 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 12 (2) , 135-138
- https://doi.org/10.1109/JSSC.1977.1050861
Abstract
Boron-doped polycrystalline silicon is applied as a diffusion source for the p-type regions of I/SUP 2/L devices. The polysilicon also serves as a conductive level which requires no contact windows in the p-type regions. Compared to conventional processing a higher fan-out, size reduction, and a greater layout flexibility are reported.Keywords
This publication has 3 references indexed in Scilit:
- Base current of I/sup 2/L transistorsIEEE Journal of Solid-State Circuits, 1977
- A polysilicon source and drain MOS transistor (PSD MOST)IEEE Transactions on Electron Devices, 1976
- Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] MixtureJournal of the Electrochemical Society, 1973