Multiwavelength laser array by chemical beam epitaxy on patterned InP substrates

29 April 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (9) , 763-765
https://doi.org/10.1049/el:19930511

Abstract

A multiwavelength laser array has been obtained through growth on patterned InP substrates using chemical beam epitaxy. This technique makes use of interfacet migration of reactant species to obtained compositional and/or thickness variation with position on a set of patterned ridges. Results obtained on 〈100〉 InP substrates with prepatterned ridges of various sizes oriented in the 〈011〉 direction are presented. A variation in lasing wavelength from 1560 to 1582 nm is obtained from lasers processed on ridges with different sizes.

Keywords

(100) SUBSTRATES
LASING WAVELENGTH
THICKNESS VARIATION
1560 TO 1582 NM
PATTERENED INP SUBSTRATES
MULTIWAVELENGTH LASER ARRAY
INGAAS-INP
INTERFACET MIGRATION
COMPOSITIONAL VARIATION
PREPATTERNED RIDGES
CHEMICAL BEAM EPITAXY

This publication has 1 reference indexed in Scilit:

Molecular Beam Epitaxical Growth of Al_xGa_1-xAs on non- Planar Patterned GaAs (100)
MRS Proceedings, 1989