Molecular Beam Epitaxical Growth of Al_xGa_1-xAs on non- Planar Patterned GaAs (100)

This publication has 7 references indexed in Scilit:

• Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate
  Applied Physics Letters, 1989
• Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates
  Applied Physics Letters, 1989
• Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates
  Applied Physics Letters, 1987
• Existence of metastable step density distributions on GaAs(100) surfaces and their consequence for molecular beam epitaxial growth
  Applied Physics Letters, 1986
• Pair-groove-substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxy
  Applied Physics Letters, 1985
• High quality molecular beam epitaxial growth on patterned GaAs substrates
  Applied Physics Letters, 1985
• Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definition
  Applied Physics Letters, 1977