100 kW DC biased, all semiconductor switch using Si P-I-N diodes and AlGaAs 2-D laser arrays
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (6) , 132-134
- https://doi.org/10.1109/68.36012
Abstract
A two-dimensional laser array, delivering a peak power of 1 kW with an overall efficiency of 33%, was used to activate silicon p-i-n diodes. A single device, activated by a 1 kW laser, produced a holding voltage of 1000 V and conducted 56 A. When two similar p-i-n diodes were connected in parallel and activated by two 1 kW AlGaAs laser arrays, a holding voltage of 1000 V and conduction of 100 A were obtained.Keywords
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