Transverse junction buried heterostructure (TJ-BH) laser diode grown by MOVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 803-808
- https://doi.org/10.1016/0022-0248(88)90622-7
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Transverse junction buried heterostructure (TJ-BH) AlGaAs diode laserElectronics Letters, 1987
- AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced DisorderingJapanese Journal of Applied Physics, 1987
- Gain-switching characteristics and fast transient response of three-terminal size-effect modulation laserIEEE Journal of Quantum Electronics, 1986
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985
- Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devicesJournal of Crystal Growth, 1984
- Selective metalorganic chemical vapour deposition for GaAs planar technologyJournal of Crystal Growth, 1984
- GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applicationsIEEE Electron Device Letters, 1984
- Selective MOCVD epitaxy for optoelectronic devicesJournal of Crystal Growth, 1981
- Monolithic integration of an injection laser and a metal semiconductor field effect transistorApplied Physics Letters, 1979
- High temperature single-mode cw operation with a junction-up TJS laserApplied Physics Letters, 1978