Thin (100 nm) SOS for Application to Beyond VLSI Microelectronics
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- High-quality CMOS in thin (100 nm) silicon on sapphireIEEE Electron Device Letters, 1988
- On frequency transformation for nonsymmetric bandpass filtersIEEE Transactions on Circuits and Systems, 1987
- Electron mobility within 100 nm of the Si/sapphire interface in double-solid-phase epitaxially regrown SOSElectronics Letters, 1986
- Lattice images of defect-free silicon on sapphire prepared by ion implantationApplied Physics Letters, 1985
- Suppressing Al outdiffusion in implantation amorphized and recrystallized silicon on sapphire filmsApplied Physics Letters, 1983
- Improvement of SOS Device Performance by Solid-Phase EpitaxyJapanese Journal of Applied Physics, 1982
- Displacement criterion for amorphization of silicon during ion implantationJournal of Applied Physics, 1981
- The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated CircuitsPublished by Elsevier ,1981
- Crystalline disorder reduction and defect-type change in silicon on sapphire films by silicon implantation and subsequent thermal annealingApplied Physics Letters, 1980
- Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniquesApplied Physics Letters, 1979