Suppressing Al outdiffusion in implantation amorphized and recrystallized silicon on sapphire films
- 15 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (8) , 707-709
- https://doi.org/10.1063/1.94033
Abstract
In this work we have used a dual implant and anneal process to significantly improve the crystalline quality of 0.3-μm silicon on sapphire films while simultaneously minimizing the outdiffusion of free Al from the sapphire into the Si layer. The crystalline quality, as measured by MeV 4He+ ion channeling closely approached 〈100〉 bulk Si values and the Al concentration, as measured by secondary ion mass spectrometry, was less than 3×1015 cm−3. An explanation for why similar techniques result in large amounts of aluminum outdiffusion when applied to 0.5-μ films is proposed.Keywords
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