Reduction in crystallographic surface defects and strain in 0.2-μm-thick silicon-on-sapphire films by repetitive implantation and solid-phase epitaxy
- 15 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 670-672
- https://doi.org/10.1063/1.93222
Abstract
No abstract availableKeywords
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