True carrier lifetime measurements of semiconductorlasers
- 28 September 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (20) , 1747-1748
- https://doi.org/10.1049/el:19951191
Abstract
Differential carrier lifetimes of semiconductor lasers are obtained directly from the device impedance measurements. This new technique gives accurate lifetimes down to low bias currents, at which correct lifetimes are an order of magnitude higher than those obtained by a commonly used optical technique. Correct lifetimes reconcile the results of early PL studies and suggest much higher carrier concentrations.Keywords
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