IC-VCE characteristics of double diffused bipolar transistors under low level injection
- 31 March 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (3) , 201-207
- https://doi.org/10.1016/0038-1101(80)90003-9
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Low current base-collector boundary conditions in GHz frequency transistorsSolid-State Electronics, 1975
- Effects of Space-Charge Layer Widening in Junction TransistorsProceedings of the IRE, 1952