Anomalous defect interaction and amorphization during self-irradiation of Si crystals at 450 K
- 16 March 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 76 (1) , K81-K84
- https://doi.org/10.1002/pssa.2210760167
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Complex-refractive-index profiles of 4 MeV Ge ion-irradiation damage in siliconPhilosophical Magazine Part B, 1981
- Radiation damage in siliconRadiation Effects, 1981
- Spatial correlation between primary and secondary defect profiles after high dose self-irradiation of Si crystalsRadiation Effects, 1979
- Range and damage profiling after heavy ion implantation in the MeV regionPhysica Status Solidi (a), 1978
- The dynamic observation of the formation of defects in silicon under electron and proton irradiationPhilosophical Magazine, 1973