Range and damage profiling after heavy ion implantation in the MeV region
- 16 June 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 47 (2) , 751-762
- https://doi.org/10.1002/pssa.2210470250
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- High-sensitivity depth profiling of arsenic and phosphorus in silicon by means of SIMSApplied Physics Letters, 1976
- Secondary ion emission studies of the range profiles of implanted ionsRadiation Effects, 1976
- Concentration profiles of boron implantations in amorphous and polycrystalline siliconRadiation Effects, 1975
- Determination of implantation profiles in solids by secondary ion mass spectrometryPhysics Letters A, 1972
- The depth distribution of 40-keV 133Xe ions in various single crystalsCanadian Journal of Physics, 1968
- Range studies using a new chemical film techniqueCanadian Journal of Physics, 1968
- Channeling of medium-mass ions through siliconCanadian Journal of Physics, 1968
- Super ranges of fast ions in copper single crystalsPhysics Letters, 1963
- THE RANGE OF ALKALI METAL IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUMCanadian Journal of Chemistry, 1960
- A RADIOCHEMICAL TECHNIQUE FOR STUDYING RANGE–ENERGY RELATIONSHIPS FOR HEAVY IONS OF KEV ENERGIES IN ALUMINUMCanadian Journal of Chemistry, 1960