Calculation of the Infrared Optical Transitions in Semiconductor Ellipsoidal Quantum Dots
- 23 February 2001
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 1 (3) , 121-124
- https://doi.org/10.1021/nl0055310
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Confined states in ellipsoidal quantum dotsJournal of Physics: Condensed Matter, 2000
- A theory for semiconductor nanostructure reactivity to gas environmentSensors and Actuators B: Chemical, 2000
- Topological surface states in deformed quantum wiresPhysical Review B, 2000
- The present status of quantum dot lasersPhysica E: Low-dimensional Systems and Nanostructures, 1999
- Silicon single-electron quantum-dot transistor switch operating at room temperatureApplied Physics Letters, 1998
- Confinement, surface, and chemisorption effects on the optical properties of Si quantum wiresPhysical Review B, 1994
- Electronic Structure Pseudopotential Calculations of Large (.apprx.1000 Atoms) Si Quantum DotsThe Journal of Physical Chemistry, 1994
- Band-edge absorption and luminescence of nonspherical nanometer-size crystalsPhysical Review B, 1993
- Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systemsAdvances in Physics, 1993
- Electronic wave functions in semiconductor clusters: experiment and theoryThe Journal of Physical Chemistry, 1986