Molybdenum germanide ohmic contact to n -GaAs

2 January 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (1) , 17-18
https://doi.org/10.1049/el:19870012

Abstract

GeMo refractory ohmic contacts for n-type GaAs with a specific contact resistivity as low as 10^-6Ωcm² have been obtained on 10¹⁸cm^-3 epitaxial layers. This low resistivity was obtained by contact annealing under As overpressure. Contacts using As-doped Ge layers and annealed without As overpressure have also been realised; in this case the obtained resistivity was 5 × 10^-6Ωcm². The ohmic contact formation resulted from the creation of an n⁺ layer by Ge overdoping and the formation of a molybedenum germanide stable phase.

Keywords

LOW RESISTIVITY
AUGER ELECTRON SPECTROSCOPY
AES
CONTACT ANNEALING
EPITAXIAL LAYERS
ALLOYS
TEM ANALYSIS
N-TYPE SEMICONDUCTOR
TRANSMISSION ELECTRON MICROSCOPY
GEMO-GAAS
GE:AS
OHMIC CONTACT

This publication has 1 reference indexed in Scilit:

Obtaining the specific contact resistance from transmission line model measurements
IEEE Electron Device Letters, 1982