High pressure electrical and phase properties of Hg3Te3-Ga2Te3alloys
- 7 January 1974
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 7 (1) , 113-126
- https://doi.org/10.1088/0022-3719/7/1/019
Abstract
Crystals of n-type (Hg3Te3)1-x-(Ga2Te3)x alloys for 02V-1s-1 for pure Hg3Te3 dropping to about 2 cm2V-1s-1 for x=0.15 Hall measurements below 18 kbar are interpreted in terms of a semimetal to semiconducting transition using k.p theory and a two carrier model and show that band inversion occurs at x=0.045+or-0.010 which is the lowest composition for this effect found for any Hg3Te3 alloy system. A negative energy gap in Hg3Te3 of -0.12+or-0.02 eV is required with a pressure coefficient, dEg/dP of +12*10-6 eV bar-1.Keywords
This publication has 18 references indexed in Scilit:
- Pressure Dependence of the Carrier Concentrations in-Type Alloys ofat 4.2 and 77°KPhysical Review B, 1972
- Non-Γ donor levels and kinetics of electron transfer in n-type CdTeSolid State Communications, 1972
- Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical BondPhysical Review Letters, 1971
- Hall effect measurements on single crystals at pressures extending to 70 kbJournal of Physics E: Scientific Instruments, 1968
- Application of a Modified Random-Element-Isodisplacement Model to Long-Wavelength Optic Phonons of Mixed CrystalsPhysical Review B, 1968
- The compressibility of bismuth and its upper transition pressureJournal of Physics and Chemistry of Solids, 1965
- Band Structure of Gray TinPhysical Review Letters, 1963
- Crystal Structures at High Pressures of Metallic Modifications of Compounds of Indium, Gallium, and AluminumScience, 1963
- Band Structure of the Intermetallic Semiconductors from Pressure ExperimentsJournal of Applied Physics, 1961
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957