Use of thermal annealing for radiation hardening of germanium to ?-rays
- 1 January 1982
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 67 (3) , 63-67
- https://doi.org/10.1080/01422448108226842
Abstract
Thermal annealing for extended periods (20-1000 hours) at moderately low temperatures (500–675°C) is shown to produce significant hardening to the γ-radiation induced EV + 0.23 eV and EV + 0.38 eV levels in Ge crystals grown by the Czochralski technique from silica crucibles. Annealed samples showed concentrations of these levels between 33–58% of those in untreated control samples, as measured by deep level transient spectroscopy. In some samples, heating to 500°C for 1 hour produced the same effect.Keywords
This publication has 6 references indexed in Scilit:
- Donor complex with tunneling hydrogen in pure germaniumPhysical Review B, 1980
- Fast and Slow Quenching Defects in GermaniumIEEE Transactions on Nuclear Science, 1978
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Chemical Impurities and Lattice Defects in High-Purity GermaniumIEEE Transactions on Nuclear Science, 1974
- Subthreshold Electron Damage in-Type GermaniumPhysical Review B, 1968
- Damage Formation Rates in Ge Subject to Thermal TreatmentPhysica Status Solidi (b), 1967