Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenide
- 1 January 1977
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 12 (1) , 75-82
- https://doi.org/10.1007/bf00900071
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Electron lifetime and diffusion constant in germanium-doped gallium arsenideJournal of Applied Physics, 1974
- Field Effect Modulated Photoluminescence in ZnOJournal of the Electrochemical Society, 1974
- Photoluminescence ofn-GaAs at transparent Schottky contactsApplied Physics A, 1973
- Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layersJournal of Applied Physics, 1973
- Quantum Efficiency and Radiative Lifetime of the Band-to-Band Recombination in Heavily Doped-Type GaAsPhysical Review B, 1972
- Temperature- and illumination-dependence of the work function of gallium arsenideSurface Science, 1972
- Effect of Surface Electric Fields on Radiative Recombination in CdSJournal of Applied Physics, 1971
- Quantum Efficiency and Radiative Lifetime in p-Type Gallium ArsenideJournal of Applied Physics, 1965
- Field Control of the Quantum Efficiency of Radiative Recombination in SemiconductorsPhysical Review B, 1965